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■ Abbreviation / Long Form : HEMTs / high electron mobility transistors

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Total Number of Papers: 40
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Abbreviation:   HEMTs  (>> Co-occurring Abbreviation)
Long Form:   high electron mobility transistors
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No. Year Title Co-occurring Abbreviation
2019 Analysis of Electrical Characteristics of InAlGaN/GaN-Based High Electron Mobility Transistors with AlGaN Back Barriers. DIBL
2019 Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures. IF, LO
2019 Design and Demonstration of Tunable Amplified Sensitivity of AlGaN/GaN High Electron Mobility Transistor (HEMT)-Based Biosensors in Human Serum. EDL, HEMT
2019 Operational Characteristics of Various AlGaN/GaN High Electron Mobility Transistor Structures Concerning Self-Heating Effect. BT, DSET, SBFP, SHE
2019 Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond. SBDs
2018 An Improved Large Signal Model for 0.1 mum AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band. DIBL, HEMT, MMIC
2018 Investigation on the I⁻V Kink Effect in Large Signal Modeling of AlGaN/GaN HEMTs. ---
2018 Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxy. LEDs, PDs, SB, UV
2018 Quantitative analysis of backscattered electron (BSE) contrast using low voltage scanning electron microscopy (LVSEM) and its application to Al0.22Ga0.78N/GaN layers. BSE, Ep, eta, LVSEM, SEM
10  2018 Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications †. HRXRD, RSM, SS
11  2018 Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional AlxGa1-xN Layers. RSM, SEM, XRD
12  2017 Beyond the Debye length in high ionic strength solution: direct protein detection with field-effect transistors (FETs) in human serum. FET, FETs
13  2017 Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length. E-mode, MMC, V th
14  2017 Organic High Electron Mobility Transistors Realized by 2D Electron Gas. 2DEG, FETs
15  2017 Simultaneous measurement of temperature, stress, and electric field in GaN HEMTs with micro-Raman spectroscopy. GaN, LO
16  2016 Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer. ---
17  2016 Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors. ---
18  2016 Ultra-high-throughput Production of III-V/Si Wafer for Electronic and Photonic Applications. ELO
19  2015 AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique. ALD, MISHEMTs
20  2015 DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure. ---
21  2015 High-Speed Planar GaAs Nanowire Arrays with fmax > 75 GHz by Wafer-Scale Bottom-up Growth. CNTs, FETs, NW, VLS
22  2015 Rogue waves lead to the instability in GaN semiconductors. NLSE
23  2015 The Current Collapse in AlGaN/GaN High-Electron Mobility Transistors Can Originate from the Energy Relaxation of Channel Electrons? ---
24  2014 Beyond CMOS: heterogeneous integration of III-V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems. CMOS, HBTs, MEMS, RF
25  2014 Comparison of recessed gate-head structures on normally-off AlGaN/GaN high-electron-mobility transistor performance. FP
26  2014 High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers. EBL, QW
27  2014 Impacts of recessed gate and fluoride-based plasma treatment approaches toward normally-off AlGaN/GaN HEMT. MIS
28  2014 Incorporation of ligand-receptor binding-site models and transistor-based sensors for resolving dissociation constants and number of binding sites. ---
29  2013 AlGaN/GaN high electron mobility transistors for protein-peptide binding affinity study. LOD
30  2013 Donor-like surface traps on two-dimensional electron gas and current collapse of AlGaN/GaN HEMTs. ---
31  2013 Kinase detection with gallium nitride based high electron mobility transistors. ---
32  2013 Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications. ---
33  2012 Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD. SLs
34  2012 Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT. Ta
35  2011 High speed terahertz modulation from metamaterials with embedded high electron mobility transistors. GaAs, MHz, THz, THz-TDS
36  2011 Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization. AFM, C-AFM
37  2010 Aluminum gallium nitride (GaN)/GaN high electron mobility transistor-based sensors for glucose detection in exhaled breath condensate. AlGaN, EBC, GaN, ZnO
38  2009 Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices. ---
39  2008 Full-band cellular Monte Carlo simulations of terahertz high electron mobility transistors. ---
40  2006 Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors. HAADF-STEM, MOCVD, TEM