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■ Abbreviation / Long Form : NEP / noise equivalent power

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Total Number of Papers: 34
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Abbreviation:   NEP  (>> Co-occurring Abbreviation)
Long Form:   noise equivalent power
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No. Year Title Co-occurring Abbreviation
2019 Microwave Radiation Detection with an Ultrathin Free-Standing Superconducting Niobium Nanohelix. TES
2019 Si-MoS2 Vertical Heterojunction for a Photodetector with High Responsivity and Low Noise Equivalent Power. ---
2018 A Low-Noise Direct Incremental A/D Converter for FET-Based THz Imaging Detectors. THz
2018 A Microbolometer System for Radiation Detection in the THz Frequency Range with a Resonating Cavity Fabricated in the CMOS Technology. ---
2018 Graphene-silicon-on-insulator (GSOI) Schottky diode photodetectors. GS, GSOI, GSOI-PDs, SOI
2018 InGaAs Diodes for Terahertz Sensing-Effect of Molecular Beam Epitaxy Growth Conditions. MBE, THz
2018 Sub-THz Imaging Using Non-Resonant HEMT Detectors. ---
2018 Waveguide-Integrated Black Phosphorus Photodetector for Mid-Infrared Applications. BP, MIR, SOI
2017 HgCdTe avalanche photodiode detectors for airborne and spaceborne lidar at infrared wavelengths. APD, HDVIP, IPDA
10  2017 High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor. HEMT
11  2017 Infrared Black Phosphorus Phototransistor with Tunable Responsivity and Low Noise Equivalent Power. BP, SWIR
12  2017 Mid-infrared Laser-Induced Fluorescence with Nanosecond Time Resolution Using a Superconducting Nanowire Single-Photon Detector: New Technology for Molecular Science. SNSPDs
13  2017 Surface plasmon induced direct detection of long wavelength photons. OMSM, SPP
14  2017 Ultra-high sensitivity infra-red detection and temperature effects in a graphene-tellurium nanowire binary hybrid. NIR, TeNW
15  2016 A filterless, visible-blind, narrow-band, and near-infrared photodetector with a gain. LDR, NIR, QDs
16  2016 Accurate Analysis and Characterization of Silicon Field Effect Transistor-Based Terahertz Wave Detector with Quasi-Plasma Two-Dimensional Electron Gas. AC, DC, FET, Si, TCAD, THz
17  2015 Ultrasensitive graphene far-infrared power detectors. ---
18  2014 10 aJ-level sensing of nanosecond pulse below 10 THz by frequency upconversion detection via DAST crystal: more than a 4 K bolometer. APD, DAST, PIN, THz
19  2014 A reconsideration of the noise equivalent power and the data analysis procedure for the infrared imaging video bolometers. CX, IRVB, NEPD
20  2014 Antenna-integrated 0.6 THz FET direct detectors based on CVD graphene. CVD, GFETs, THz
21  2014 Experimental measurements and noise analysis of a cryogenic radiometer. ---
22  2013 InGaAs Schottky barrier diode array detector for a real-time compact terahertz line scanner. SBD, THz
23  2012 2D array of cold-electron nanobolometers with double polarised cross-dipole antennas. CEB, JFET
24  2012 Room-temperature terahertz detectors based on semiconductor nanowire field-effect transistors. NWs
25  2009 ZnO subwavelength wires for fast-response mid-infrared detection. ---
26  2008 Initial test results on bolometers for the Planck high frequency instrument. HFI
27  2005 Carbon nanotube Schottky diodes using Ti-Schottky and Pt-Ohmic contacts for high frequency applications. s-SWNTs, THz
28  2000 Noise-Optimized Silicon Radiometers. RMS
29  1998 Development of a Bolometer Detector System for the NIST High Accuracy Infrared Spectrophotometer. ---
30  1994 Single-photon detection beyond 1 m: performance of commercially available germanium photodiodes. APD's
31  1981 High sensitivity operation of discrete solid state detectors at 4 K. JFET
32  1980 Limits to the NEP of an intracavity LiNbO(3) upconverter. ---
33  1975 Johnson Noise Limited Operation of Photovoltaic InSb Detectors. ---
34  1969 Infrared-to-Millimeter, Broadband, Solid State Bolometer Detectors. ---