| 1 |
gallium arsenide
(155 times)
|
Toxicology
(31 times)
|
InAs (11 times)
ALAD (10 times)
Si (10 times)
|
1981 Optical reflectance: a sensitive nondestructive method for detecting surface damage in crystalline GaAs and other semiconductors.
|
| 2 |
gallium-arsenide laser
(3 times)
|
Biology
(3 times)
|
LLLT (2 times)
CK (1 time)
GaAlAs (1 time)
|
2010 Effect of gallium-arsenide laser, gallium-aluminum-arsenide laser and healing ointment on cutaneous wound healing in Wistar rats.
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| 3 |
gallium aluminium arsenide
(2 times)
|
Dentistry
(1 time)
|
He-Ne (2 times)
TBO (2 times)
|
1993 Sensitisation of Candida albicans to killing by low-power laser light.
|
| 4 |
GaAs1-xSbx nanowires is tunable from 844 nm
(1 time)
|
Nanotechnology
(1 time)
|
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|
2017 Near Full-Composition-Range High-Quality GaAs1-xSbx Nanowires Grown by Molecular-Beam Epitaxy.
|
| 5 |
Gamma -X electron-transfer rates in a
(1 time)
|
|
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|
1991 Pressure-induced Gamma -X electron-transfer rates in a (GaAs)15/(AlAs)5 superlattice.
|
| 6 |
geometrical structures of neutral, negatively, and positively charged
(1 time)
|
Biophysics
(1 time)
|
ECPs (1 time)
|
2008 The structure and energetics of (GaAs)n, (GaAs)n(-), and (GaAs)n+ (n=2-15).
|
| 7 |
ground state to ten singlet states of all
(1 time)
|
Chemistry
(1 time)
|
DFT-GGA (1 time)
|
2008 Optical properties of (GaAs)n clusters (n = 2-16).
|
| 8 |
growth of InxGa1-xAs
(1 time)
|
Natural Science Disciplines
(1 time)
|
RHEED (1 time)
TEM (1 time)
|
2018 Real-Time Characterization Using in situ RHEED Transmission Mode and TEM for Investigation of the Growth Behaviour of Nanomaterials.
|
| 9 |
laser--Gallium Arsenide
(1 time)
|
Military Medicine
(1 time)
|
ALBP (1 time)
LPL (1 time)
NMRI (1 time)
|
2011 [Low power laser in the treatment of the acute low back pain].
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| 10 |
nano-gallium arsenide
(1 time)
|
|
DPF (1 time)
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2015 Dense Plasma Focus-Based Nanofabrication of III-V Semiconductors: Unique Features and Recent Advances.
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