A Search Service for Abbreviation / Long Form

■ Search Result - Abbreviation : ReRAM

Search Conditions:
Search Keyword : ReRAM
Search Method : Exact match.
Research Area:

Results:  
Abbreviation: ReRAM
Appearance Frequency: 81 time(s)
Long forms: 9

Display Settings:
[Entries Per Page]
 per page
Page Control
Page: of
Long Form No. Long Form Research Area Co-occurring Abbreviation PubMed/MEDLINE Info. (Year, Title)
resistive random access memory
(56 times)
Nanotechnology
(28 times)
HRS (6 times)
LRS (4 times)
RS (4 times)
2010 Proton-based total-dose irradiation effects on Cu/HfO2:Cu/Pt ReRAM devices.
resistive switching random access memory
(12 times)
Nanotechnology
(8 times)
GO (2 times)
RS (2 times)
BEs (1 time)
2012 Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots.
random-access memory
(7 times)
Biotechnology
(2 times)
BRS (1 time)
CF (1 time)
HRS (1 time)
2014 Improved bipolar resistive switching memory characteristics in Ge0.5Se0.5 solid electrolyte by using dispersed silver nanocrystals on bottom electrode.
random resistive memory
(1 time)
--- 2020 Synthesis and Memristor Effect of a Forming-Free ZnO Nanocrystalline Films.
redox-based resistive memory cells
(1 time)
Biophysics
(1 time)
ECM (1 time)
ToF-SIMS (1 time)
XAS (1 time)
2014 Physical origins and suppression of Ag dissolution in GeS(x)-based ECM cells.
resistance change memory
(1 time)
Nanotechnology
(1 time)
--- 2019 Improvement in Resistance Switching of SiC-Based Nonvolatile Memory by Solution-Deposited HfOx Thin Film.
resistive RAM
(1 time)
Nanotechnology
(1 time)
STM (1 time)
2012 Electrically tailored resistance switching in silicon oxide.
resistive random access
(1 time)
Nanotechnology
(1 time)
CF (1 time)
CLPS (1 time)
VO (1 time)
2017 Roles of conducting filament and non-filament regions in the Ta2O5 and HfO2 resistive switching memory for switching reliability.
resistive random access memory devices
(1 time)
Biophysics
(1 time)
FE (1 time)
2018 Ferroelectric-mediated filamentary resistive switching in P(VDF-TrFE)/ZnO nanocomposite films.