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Abbreviation: a-IGZO
Appearance Frequency: 108 time(s)
Long forms: 5

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Long Form No. Long Form Research Area Co-occurring Abbreviation PubMed/MEDLINE Info. (Year, Title)
amorphous indium gallium zinc oxide
(69 times)
Nanotechnology
(23 times)
TFTs (37 times)
TFT (16 times)
SS (4 times)
2011 The effect of annealing ambient on the characteristics of an indium-gallium-zinc oxide thin film transistor.
amorphous In-Ga-Zn-O
(35 times)
Biomedical Engineering
(11 times)
TFTs (17 times)
SS (4 times)
VO (4 times)
2010 Nanometer-scale oxide thin film transistor with potential for high-density image sensor applications.
amorphous In-Ga-Zn-oxide
(2 times)
Chemistry Techniques, Analytical
(1 time)
EDL (1 time)
IS-TGT (1 time)
ITO (1 time)
2017 Ion Sensitive Transparent-Gate Transistor for Visible Cell Sensing.
achieved in developing heterojunctions consisting of indium-gallium-zinc oxide
(1 time)
Nanotechnology
(1 time)
BN (1 time)
BP (1 time)
2020 High performance IGZO-based phototransistors by BN/BP interface engineering.
amorphous oxide semiconductor from the In-Ga-Zn-O system
(1 time)
Science
(1 time)
TTFTs (1 time)
2004 Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors.