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■ Search Result - Abbreviation : GaAs

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Abbreviation: GaAs
Appearance Frequency: 204 time(s)
Long forms: 10

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Long Form No. Long Form Research Area Co-occurring Abbreviation PubMed/MEDLINE Info. (Year, Title)
gallium arsenide
(192 times)
(32 times)
Si (13 times)
InAs (12 times)
ALAD (10 times)
1981 Optical reflectance: a sensitive nondestructive method for detecting surface damage in crystalline GaAs and other semiconductors.
gallium-arsenide laser
(3 times)
(3 times)
LLLT (2 times)
CK (1 time)
GaAlAs (1 time)
2010 Effect of gallium-arsenide laser, gallium-aluminum-arsenide laser and healing ointment on cutaneous wound healing in Wistar rats.
gallium aluminium arsenide
(2 times)
(1 time)
He-Ne (2 times)
TBO (2 times)
1993 Sensitisation of Candida albicans to killing by low-power laser light.
GaAs1-xSbx nanowires is tunable from 844 nm
(1 time)
(1 time)
--- 2017 Near Full-Composition-Range High-Quality GaAs1-xSbx Nanowires Grown by Molecular-Beam Epitaxy.
Gamma -X electron-transfer rates in a
(1 time)
--- 1991 Pressure-induced Gamma -X electron-transfer rates in a (GaAs)15/(AlAs)5 superlattice.
geometrical structures of neutral, negatively, and positively charged
(1 time)
(1 time)
ECPs (1 time)
2008 The structure and energetics of (GaAs)n, (GaAs)n(-), and (GaAs)n+ (n=2-15).
ground state to ten singlet states of all
(1 time)
(1 time)
DFT-GGA (1 time)
2008 Optical properties of (GaAs)n clusters (n = 2-16).
growth of InxGa1-xAs
(1 time)
Natural Science Disciplines
(1 time)
RHEED (1 time)
TEM (1 time)
2018 Real-Time Characterization Using in situ RHEED Transmission Mode and TEM for Investigation of the Growth Behaviour of Nanomaterials.
laser--Gallium Arsenide
(1 time)
Military Medicine
(1 time)
ALBP (1 time)
LPL (1 time)
NMRI (1 time)
2011 [Low power laser in the treatment of the acute low back pain].
10  nano-gallium arsenide
(1 time)
DPF (1 time)
2015 Dense Plasma Focus-Based Nanofabrication of III-V Semiconductors: Unique Features and Recent Advances.